Infrared surface plasmons on heavily doped silicon

Infrared surface plasmons on heavily doped silicon

Monas Shahzad, Gautam Medhi, Robert E. Peale, Walter R. Buchwald, Justin W. Cleary, Richard Soref, Glenn D. Boreman, and Oliver Edwards Department of Physics, University of Central Florida, Orlando, Florida 32816, USA Solid State Scientific Corporation, 27-2 Wright Road, Hollis, New Hampshire 03049, USA Sensors Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Ohio 45...

Near-infrared free carrier absorption in heavily doped silicon

Mid-Infrared Sensing Using Heavily Doped Germanium Plasmonics on Silicon Substrates

Superconductivity in heavily boron-doped silicon carbide.

The discoveries of superconductivity in heavily boron-doped diamond in 2004 and silicon in 2006 have renewed the interest in the superconducting state of semiconductors. Charge-carrier doping of wide-gap semiconductors leads to a metallic phase from which upon further doping superconductivity can emerge. Recently, we discovered superconductivity in a closely related system: heavily boron-doped ...

Superconductivity of hexagonal heavily-boron doped silicon carbide

In 2004 the discovery of superconductivity in heavily boron-doped diamond (C:B) led to an increasing interest in the superconducting phases of wide-gap semiconductors. Subsequently superconductivity was found in heavily boron-doped cubic silicon (Si:B) and recently in the stochiometric ”mixture” of heavily boron-doped silicon carbide (SiC:B). The latter system surprisingly exhibits type-I super...